SIC 2N-CH 1200V 475A MODULE
| Part | Package / Case | Technology | Power - Max [Max] | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Supplier Device Package | Configuration | Operating Temperature [Max] | Operating Temperature [Min] | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GE Aerospace | Module | Silicon Carbide (SiC) | 1250 W | 1248 nC | 29300 pF | 475 A | Chassis Mount | Module | 2 N-Channel (Half Bridge) | 150 °C | -55 °C | 4.4 mOhm | 4.5 V | 1200 V | 1.2 kV |