AOWF12N60

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 12A TO262F

Search across all available documentation for this part.

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 12A TO262F

Technical Specifications

Parameters and characteristics for this part

Specification	AOWF12N60

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Input Capacitance (Ciss) (Max) @ Vds	2100 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max) [Max]	28 W
Rds On (Max) @ Id, Vgs	550 mOhm
Supplier Device Package	TO-262F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Vgs (Max)	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	FET Type	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]
Alpha & Omega Semiconductor Inc. AOWF12N60	30 V	MOSFET (Metal Oxide)	550 mOhm	12 A	4.5 V	-55 °C	150 °C	2100 pF	28 W	600 V	TO-262F	N-Channel	I2PAK TO-262-3 Long Leads TO-262AA	Through Hole	50 nC	10 V
Alpha & Omega Semiconductor Inc. AOWF12N65	30 V	MOSFET (Metal Oxide)		12 A	4.5 V	-55 °C	150 °C		28 W	650 V	TO-262F	N-Channel	I2PAK TO-262-3 Long Leads TO-262AA	Through Hole	48 nC	10 V	720 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$