MOSFET N-CH 600V 12A TO262F
| Part | Vgs (Max) | Technology | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) [Max] | Drain to Source Voltage (Vdss) | Supplier Device Package | FET Type | Package / Case | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | 30 V | MOSFET (Metal Oxide) | 550 mOhm | 12 A | 4.5 V | -55 °C | 150 °C | 2100 pF | 28 W | 600 V | TO-262F | N-Channel | I2PAK TO-262-3 Long Leads TO-262AA | Through Hole | 50 nC | 10 V | |
Alpha & Omega Semiconductor Inc. | 30 V | MOSFET (Metal Oxide) | 12 A | 4.5 V | -55 °C | 150 °C | 28 W | 650 V | TO-262F | N-Channel | I2PAK TO-262-3 Long Leads TO-262AA | Through Hole | 48 nC | 10 V | 720 mOhm |