2SK3566(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 900V 2.5A TO220SIS

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Toshiba Semiconductor and Storage

MOSFET N-CH 900V 2.5A TO220SIS

Technical Specifications

Parameters and characteristics for this part

Specification	2SK3566(STA4,Q,M)

Current - Continuous Drain (Id) @ 25°C	2.5 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	470 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	40 W
Rds On (Max) @ Id, Vgs	6.4 Ohm
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature	Vgs (Max)	Technology	Power Dissipation (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type
Toshiba Semiconductor and Storage 2SK3566(STA4,Q,M)	12 nC	10 V	900 V	TO-220-3 Full Pack	6.4 Ohm	N-Channel	150 °C	30 V	MOSFET (Metal Oxide)	40 W	TO-220SIS	2.5 A	470 pF	Through Hole

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General part information

N-Channel 900 V 2.5A (Ta) 40W (Tc) Through Hole TO-220SIS

Technical documentation and resources