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MOSFET N-CH 900V 2.5A TO220SIS
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Package / Case | Rds On (Max) @ Id, Vgs | FET Type | Operating Temperature | Vgs (Max) | Technology | Power Dissipation (Max) | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 12 nC | 10 V | 900 V | TO-220-3 Full Pack | 6.4 Ohm | N-Channel | 150 °C | 30 V | MOSFET (Metal Oxide) | 40 W | TO-220SIS | 2.5 A | 470 pF | Through Hole |