2SK3700(F)

Toshiba Semiconductor and Storage

MOSFET N-CH 900V 5A TO3P

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Toshiba Semiconductor and Storage

MOSFET N-CH 900V 5A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	2SK3700(F)

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	900 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	28 nC
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	2.5 Ohm
Supplier Device Package	TO-3P(N)
Technology	MOSFET (Metal Oxide)

Part	Supplier Device Package	FET Type	Technology	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Mounting Type	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage 2SK3700(F)	TO-3P(N)	N-Channel	MOSFET (Metal Oxide)	2.5 Ohm	28 nC	SC-65-3 TO-3P-3	150 W	5 A	150 °C	Through Hole	900 V

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General part information

N-Channel 900 V 5A (Ta) 150W (Tc) Through Hole TO-3P(N)

Technical documentation and resources