2SK3700 Series

Catalog

MOSFET N-CH 900V 5A TO3P

Part	Supplier Device Package	FET Type	Technology	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Mounting Type	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage 2SK3700(F)	TO-3P(N)	N-Channel	MOSFET (Metal Oxide)	2.5 Ohm	28 nC	SC-65-3 TO-3P-3	150 W	5 A	150 °C	Through Hole	900 V