SGL160N60UFDTU

Obsolete

ON Semiconductor

600V, 50A SHORT CIRCUIT RATED IGBT

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DocumentsDatasheet Package Drawing-340CA-TO-264-3LD +1

SGL160N60UFDTU

Obsolete

ON Semiconductor

600V, 50A SHORT CIRCUIT RATED IGBT

Deep-Dive with AI

DocumentsDatasheet Package Drawing-340CA-TO-264-3LD +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SGL160N60UFDTU

Current - Collector (Ic) (Max) [Max]	160 A
Current - Collector Pulsed (Icm)	300 A
Gate Charge	345 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power - Max [Max]	250 W
Reverse Recovery Time (trr)	95 ns
Supplier Device Package	TO-264-3
Switching Energy	2500 µJ, 1.76 mJ
Td (on/off) @ 25°C	40 ns, 90 ns
Test Condition	3.9 Ohm, 15 V, 80 A, 300 V
Vce(on) (Max) @ Vge, Ic	2.6 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

SGL160N60UFD Series

600V, 50A Short Circuit Rated IGBT

Part	Test Condition	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Td (on/off) @ 25°C	Current - Collector Pulsed (Icm)	Reverse Recovery Time (trr)	Vce(on) (Max) @ Vge, Ic	Gate Charge	Power - Max [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Switching Energy
ON Semiconductor SGL160N60UFDTU	3.9 Ohm 15 V 80 A 300 V	Through Hole	600 V	160 A	40 ns 90 ns	300 A	95 ns	2.6 V	345 nC	250 W	TO-264-3	-55 °C	150 °C	TO-264-3 TO-264AA	1.76 mJ 2500 µJ

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

SGL160N60UFD Series

ON Semiconductor’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, UPS and general inverters where short circuit ruggedness is a required feature.