SGL160N60UFD Series

600V, 50A Short Circuit Rated IGBT

Catalog

600V, 50A Short Circuit Rated IGBT

Part	Test Condition	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Td (on/off) @ 25°C	Current - Collector Pulsed (Icm)	Reverse Recovery Time (trr)	Vce(on) (Max) @ Vge, Ic	Gate Charge	Power - Max [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Switching Energy
ON Semiconductor SGL160N60UFDTU	3.9 Ohm 15 V 80 A 300 V	Through Hole	600 V	160 A	40 ns 90 ns	300 A	95 ns	2.6 V	345 nC	250 W	TO-264-3	-55 °C	150 °C	TO-264-3 TO-264AA	1.76 mJ 2500 µJ

Catalog

600V, 50A Short Circuit Rated IGBT

Key Features

• High Speed Switching

• Low Saturation Voltage : VCE(sat)= 2.1 V @ IC= 80A

• High Input Impedance

• CO-PAK, IGBT with FRD : trr= 75ns (typ.)

Description

ON Semiconductor’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, UPS and general inverters where short circuit ruggedness is a required feature.