PJMF360N60E1_T0_00001

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Panjit International Inc.

600V/ 360MOHM SUPER JUNCTION EAS

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Panjit International Inc.

600V/ 360MOHM SUPER JUNCTION EAS

Technical Specifications

Parameters and characteristics for this part

Specification	PJMF360N60E1_T0_00001

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds	717 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max)	32 W
Rds On (Max) @ Id, Vgs	360 mOhm
Supplier Device Package	ITO-220AB-F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Package / Case	FET Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type
Panjit International Inc. PJMF360N60E1_T0_00001	32 W	4 V	10 V	30 V	ITO-220AB-F	11 A	600 V	-55 °C	150 °C	22 nC	MOSFET (Metal Oxide)	TO-220-3 Full Pack Isolated Tab	N-Channel	360 mOhm	717 pF	Through Hole
Panjit International Inc. PJMF360N60EC_T0_00001		4 V	10 V	30 V	ITO-220AB-F	11 A	600 V	-55 °C	150 °C	18.7 nC	MOSFET (Metal Oxide)	TO-220-3 Full Pack Isolated Tab	N-Channel	360 mOhm	735 pF	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	2000	$ 0.84

General part information

N-Channel 600 V 11A (Tc) 32W (Tc) Through Hole ITO-220AB-F

Technical documentation and resources

No documents available