TK25E06K3,S1X(S

Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 25A TO220-3

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Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 25A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	TK25E06K3,S1X(S

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	60 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	18 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)

Part	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Package / Case	FET Type	Technology	Supplier Device Package	Operating Temperature	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C
Toshiba Semiconductor and Storage TK25E06K3,S1X(S	29 nC	60 W	TO-220-3	N-Channel	MOSFET (Metal Oxide)	TO-220-3	150 °C	Through Hole	18 mOhm	60 V	25 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 25A (Ta) 60W (Tc) Through Hole TO-220-3

Technical documentation and resources