Beta
⌘K
MOSFET N-CH 60V 25A TO220-3
| Part | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Package / Case | FET Type | Technology | Supplier Device Package | Operating Temperature | Mounting Type | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 29 nC | 60 W | TO-220-3 | N-Channel | MOSFET (Metal Oxide) | TO-220-3 | 150 °C | Through Hole | 18 mOhm | 60 V | 25 A |