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ZXMN10B08E6TA - Package Image for SOT26

ZXMN10B08E6TA

Active
Diodes Inc

POWER MOSFET, N CHANNEL, 100 V, 1.6 A, 0.23 OHM, SOT-26, SURFACE MOUNT

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ZXMN10B08E6TA - Package Image for SOT26

ZXMN10B08E6TA

Active
Diodes Inc

POWER MOSFET, N CHANNEL, 100 V, 1.6 A, 0.23 OHM, SOT-26, SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationZXMN10B08E6TA
Current - Continuous Drain (Id) @ 25°C1.6 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)4.3 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs9.2 nC
Input Capacitance (Ciss) (Max) @ Vds497 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-6
Power Dissipation (Max)1.1 W
Rds On (Max) @ Id, Vgs230 mOhm
Supplier Device PackageSOT-26
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.74
10$ 0.64
100$ 0.44
500$ 0.37
1000$ 0.31
Digi-Reel® 1$ 0.74
10$ 0.64
100$ 0.44
500$ 0.37
1000$ 0.31
Tape & Reel (TR) 3000$ 0.29
6000$ 0.27
9000$ 0.26
15000$ 0.25

Description

General part information

ZXMN10B08E6 Series

This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.