ZXMN10B08E6 Series

N-Channel Enhancement Mode MOSFET

Catalog

N-Channel Enhancement Mode MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Package / Case	Power Dissipation (Max) [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Power Dissipation (Max)
Diodes Inc ZXMN10A25GTA	17 nC	Surface Mount	100 V	SOT-223-3	4 V	2.9 A	20 V	-55 °C	150 °C	10 V	125 mOhm	TO-261-4 TO-261AA	2 W	MOSFET (Metal Oxide)	859 pF	N-Channel
Diodes Inc ZXMN10B08E6TA	9.2 nC	Surface Mount	100 V	SOT-26	3 V	1.6 A	20 V	-55 °C	150 °C	4.3 V 10 V	230 mOhm	SOT-23-6		MOSFET (Metal Oxide)	497 pF	N-Channel	1.1 W
Diodes Inc ZXMN10A07FTA	2.9 nC	Surface Mount	100 V	SOT-23-3	4 V		20 V	-55 °C	150 °C	6 V 10 V	700 mOhm	SC-59 SOT-23-3 TO-236-3	625 mW	MOSFET (Metal Oxide)	138 pF	N-Channel

Catalog

N-Channel Enhancement Mode MOSFET

Key Features

• Low On-Resistance

• Fast Switching Speed

• Low Threshold

• Low Gate Drive

• SOT26 Package

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found athttps://www.diodes.com/products/automotive/automotiveproducts/.

• This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.https://www.diodes.com/quality/product-definitions/

Description

This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.