XPH3R114MC,L1XHQ

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Toshiba Semiconductor and Storage

MOSFET P-CH 40V 100A 8SOP

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Toshiba Semiconductor and Storage

MOSFET P-CH 40V 100A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	XPH3R114MC,L1XHQ

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	230 nC
Input Capacitance (Ciss) (Max) @ Vds	9500 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	960 mW, 170 W
Rds On (Max) @ Id, Vgs [Max]	3.1 mOhm
Supplier Device Package	8-SOP Advance (5x5)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs (Max) [Min]	-20 V
Vgs(th) (Max) @ Id	2.1 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Vgs (Max) [Min]	Vgs (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Supplier Device Package	Operating Temperature	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)
Toshiba Semiconductor and Storage XPH3R114MC,L1XHQ	230 nC	8-PowerVDFN	170 W 960 mW	40 V	2.1 V	-20 V	10 V	9500 pF	P-Channel	8-SOP Advance (5x5)	175 °C	MOSFET (Metal Oxide)	100 A	3.1 mOhm	Surface Mount	4.5 V 10 V

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General part information

P-Channel 40 V 100A (Ta) 960mW (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5)

Technical documentation and resources

No documents available