MOSFET P-CH 40V 100A 8SOP
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Vgs (Max) [Min] | Vgs (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Supplier Device Package | Operating Temperature | Technology | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs [Max] | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 230 nC | 8-PowerVDFN | 170 W 960 mW | 40 V | 2.1 V | -20 V | 10 V | 9500 pF | P-Channel | 8-SOP Advance (5x5) | 175 °C | MOSFET (Metal Oxide) | 100 A | 3.1 mOhm | Surface Mount | 4.5 V 10 V |