SCS215AEGC11
ActiveRohm Semiconductor
650V, 15A, 3-PIN THD, SILICON-CARBIDE (SIC) SBD
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SCS215AEGC11
ActiveRohm Semiconductor
650V, 15A, 3-PIN THD, SILICON-CARBIDE (SIC) SBD
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | SCS215AEGC11 |
|---|---|
| Capacitance @ Vr, F | 550 pF |
| Current - Average Rectified (Io) | 15 A |
| Current - Reverse Leakage @ Vr | 300 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | 175 °C |
| Package / Case | TO-247-3 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | TO-247 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.55 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 7.41 | |
| 30 | $ 4.33 | |||
| 120 | $ 3.80 | |||
| 510 | $ 3.80 | |||
Description
General part information
SCS215AJ Series
Switching loss reduced, enabling high-speed switching . (3-pin package)
Documents
Technical documentation and resources