AOD7N60

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 7A TO252

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 7A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	AOD7N60

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	1170 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	178 W
Rds On (Max) @ Id, Vgs	1.3 Ohm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	FET Type	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)
Alpha & Omega Semiconductor Inc. AOD7S65	434 pF	30 V	7 A	10 V	9.2 nC	4 V	N-Channel	650 V	MOSFET (Metal Oxide)	650 mOhm	TO-252 (DPAK)	-55 °C	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount
Alpha & Omega Semiconductor Inc. AOD7N60	1170 pF	30 V	7 A	10 V		4.5 V	N-Channel	600 V	MOSFET (Metal Oxide)	1.3 Ohm	TO-252 (DPAK)	-50 °C	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	24 nC	178 W

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