MOSFET N-CH 650V 7A TO252
| Part | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | FET Type | Drain to Source Voltage (Vdss) | Technology | Rds On (Max) @ Id, Vgs | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | 434 pF | 30 V | 7 A | 10 V | 9.2 nC | 4 V | N-Channel | 650 V | MOSFET (Metal Oxide) | 650 mOhm | TO-252 (DPAK) | -55 °C | 150 °C | DPAK (2 Leads + Tab) SC-63 TO-252-3 | Surface Mount | ||
Alpha & Omega Semiconductor Inc. | 1170 pF | 30 V | 7 A | 10 V | 4.5 V | N-Channel | 600 V | MOSFET (Metal Oxide) | 1.3 Ohm | TO-252 (DPAK) | -50 °C | 150 °C | DPAK (2 Leads + Tab) SC-63 TO-252-3 | Surface Mount | 24 nC | 178 W |