MT53E128M32D2FW-046 AAT:A TR

Active

Micron Technology Inc.

IC DRAM 4GBIT PAR 200TFBGA

Deep-Dive with AI

Search across all available documentation for this part.

MT53E128M32D2FW-046 AAT:A TR

Active

Micron Technology Inc.

IC DRAM 4GBIT PAR 200TFBGA

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MT53E128M32D2FW-046 AAT:A TR

Clock Frequency	2.133 GHz
Grade	Automotive
Memory Format	DRAM
Memory Interface	Parallel
Memory Organization	128 M
Memory Size	512 kb
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	105 °C
Operating Temperature [Min]	-40 °C
Package / Case	200-TFBGA
Qualification	AEC-Q100
Supplier Device Package	200-TFBGA
Supplier Device Package [x]	10
Supplier Device Package [y]	14.5
Technology	SDRAM - Mobile LPDDR4
Voltage - Supply [Max]	1.17 V
Voltage - Supply [Min]	1.06 V
Write Cycle Time - Word, Page	18 ns

MT53E128 Series

Part	Mounting Type	Memory Organization	Technology	Voltage - Supply	Memory Size	Memory Format	Operating Temperature [Max]	Operating Temperature [Min]	Qualification	Grade	Supplier Device Package	Clock Frequency	Package / Case	Memory Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Memory Interface	Supplier Device Package [y]	Supplier Device Package [x]	Write Cycle Time - Word, Page
Micron Technology Inc. MT53E128M32D2DS-046 AAT:A	Surface Mount	128 M	SDRAM - Mobile LPDDR4	1.1 V	512 kb	DRAM	105 °C	-40 °C	AEC-Q100	Automotive	200-WFBGA (10x14.5)	2.133 GHz	200-WFBGA	Volatile
Micron Technology Inc. MT53E128M32D2FW-046 AAT:A TR	Surface Mount	128 M	SDRAM - Mobile LPDDR4		512 kb	DRAM	105 °C	-40 °C	AEC-Q100	Automotive	200-TFBGA	2.133 GHz	200-TFBGA	Volatile	1.06 V	1.17 V	Parallel	14.5	10	18 ns
Micron Technology Inc. MT53E128M16D1DS-046 WT:A		128 M	SDRAM - Mobile LPDDR4	1.1 V	2 Gbit	DRAM	85 °C	-30 °C				2.133 GHz		Volatile
Micron Technology Inc. MT53E128M16D1DS-053 AIT:A TR		128 M	SDRAM - Mobile LPDDR4	1.1 V	2 Gbit	DRAM	95 °C	-40 °C	AEC-Q100	Automotive		1866 MHz		Volatile
Micron Technology Inc. MT53E128M16D1DS-046 AIT:A TR		128 M	SDRAM - Mobile LPDDR4	1.1 V	2 Gbit	DRAM	95 °C	-40 °C	AEC-Q100	Automotive		2.133 GHz		Volatile
Micron Technology Inc. MT53E128M16D1DS-053 AIT:A		128 M	SDRAM - Mobile LPDDR4	1.1 V	2 Gbit	DRAM	95 °C	-40 °C	AEC-Q100	Automotive		1866 MHz		Volatile
Micron Technology Inc. MT53E128M32D2DS-046 AAT:A TR	Surface Mount	128 M	SDRAM - Mobile LPDDR4	1.1 V	512 kb	DRAM	105 °C	-40 °C	AEC-Q100	Automotive	200-WFBGA (10x14.5)	2.133 GHz	200-WFBGA	Volatile
Micron Technology Inc. MT53E128M32D2DS-053 AIT:A TR	Surface Mount	128 M	SDRAM - Mobile LPDDR4	1.1 V	512 kb	DRAM	95 °C	-40 °C	AEC-Q100	Automotive	200-WFBGA (10x14.5)	1866 MHz	200-WFBGA	Volatile
Micron Technology Inc. MT53E128M16D1Z19MWC1		128 M	SDRAM - Mobile LPDDR4		2 Gbit	DRAM					Die		Die
Micron Technology Inc. MT53E128M16D1DS-046 WT:A TR		128 M	SDRAM - Mobile LPDDR4	1.1 V	2 Gbit	DRAM	85 °C	-30 °C				2.133 GHz		Volatile

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	2000	$ 6.85

Description

General part information

MT53E128 Series

SDRAM - Mobile LPDDR4 Memory IC 4Gbit Parallel 2.133 GHz 3.5 ns 200-TFBGA (10x14.5)

Documents

Technical documentation and resources

No documents available