IC DRAM 4GBIT 2.133GHZ 200WFBGA
| Part | Mounting Type | Memory Organization | Technology | Voltage - Supply | Memory Size | Memory Format | Operating Temperature [Max] | Operating Temperature [Min] | Qualification | Grade | Supplier Device Package | Clock Frequency | Package / Case | Memory Type | Voltage - Supply [Min] | Voltage - Supply [Max] | Memory Interface | Supplier Device Package [y] | Supplier Device Package [x] | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micron Technology Inc. | Surface Mount | 128 M | SDRAM - Mobile LPDDR4 | 1.1 V | 512 kb | DRAM | 105 °C | -40 °C | AEC-Q100 | Automotive | 200-WFBGA (10x14.5) | 2.133 GHz | 200-WFBGA | Volatile | ||||||
Micron Technology Inc. | Surface Mount | 128 M | SDRAM - Mobile LPDDR4 | 512 kb | DRAM | 105 °C | -40 °C | AEC-Q100 | Automotive | 200-TFBGA | 2.133 GHz | 200-TFBGA | Volatile | 1.06 V | 1.17 V | Parallel | 14.5 | 10 | 18 ns | |
Micron Technology Inc. | 128 M | SDRAM - Mobile LPDDR4 | 1.1 V | 2 Gbit | DRAM | 85 °C | -30 °C | 2.133 GHz | Volatile | |||||||||||
Micron Technology Inc. | 128 M | SDRAM - Mobile LPDDR4 | 1.1 V | 2 Gbit | DRAM | 95 °C | -40 °C | AEC-Q100 | Automotive | 1866 MHz | Volatile | |||||||||
Micron Technology Inc. | 128 M | SDRAM - Mobile LPDDR4 | 1.1 V | 2 Gbit | DRAM | 95 °C | -40 °C | AEC-Q100 | Automotive | 2.133 GHz | Volatile | |||||||||
Micron Technology Inc. | 128 M | SDRAM - Mobile LPDDR4 | 1.1 V | 2 Gbit | DRAM | 95 °C | -40 °C | AEC-Q100 | Automotive | 1866 MHz | Volatile | |||||||||
Micron Technology Inc. | Surface Mount | 128 M | SDRAM - Mobile LPDDR4 | 1.1 V | 512 kb | DRAM | 105 °C | -40 °C | AEC-Q100 | Automotive | 200-WFBGA (10x14.5) | 2.133 GHz | 200-WFBGA | Volatile | ||||||
Micron Technology Inc. | Surface Mount | 128 M | SDRAM - Mobile LPDDR4 | 1.1 V | 512 kb | DRAM | 95 °C | -40 °C | AEC-Q100 | Automotive | 200-WFBGA (10x14.5) | 1866 MHz | 200-WFBGA | Volatile | ||||||
Micron Technology Inc. | 128 M | SDRAM - Mobile LPDDR4 | 2 Gbit | DRAM | Die | Die | ||||||||||||||
Micron Technology Inc. | 128 M | SDRAM - Mobile LPDDR4 | 1.1 V | 2 Gbit | DRAM | 85 °C | -30 °C | 2.133 GHz | Volatile |