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W63AH2NBVACE - 8 WSON

W63AH2NBVACE

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Winbond Electronics

IC DRAM 1GBIT HSUL 12 178VFBGA

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W63AH2NBVACE - 8 WSON

W63AH2NBVACE

Active
Winbond Electronics

IC DRAM 1GBIT HSUL 12 178VFBGA

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationW63AH2NBVACE
Access Time5.5 ns
Clock Frequency933 MHz
Memory FormatDRAM
Memory InterfaceHSUL_12
Memory Organization32 M
Memory Size1 Mbit
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-25 °C
Package / Case178-VFBGA
Supplier Device Package178-VFBGA
Supplier Device Package [x]11
Supplier Device Package [y]11.5
TechnologySDRAM - Mobile LPDDR3
Voltage - Supply [Max]1.95 V, 1.3 V
Voltage - Supply [Min]1.7 V, 1.14 V
Write Cycle Time - Word, Page15 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 189$ 3.71

Description

General part information

W63AH2 Series

SDRAM - Mobile LPDDR3 Memory IC 1Gbit HSUL_12 933 MHz 5.5 ns 178-VFBGA (11x11.5)

Documents

Technical documentation and resources