6A10G B0G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 6A R-6

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Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 6A R-6

Technical Specifications

Parameters and characteristics for this part

Specification	6A10G B0G

Capacitance @ Vr, F	60 pF
Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	R-6, Axial
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	R-6
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Current - Average Rectified (Io)	Technology	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Speed	Supplier Device Package	Qualification	Grade
Taiwan Semiconductor Corporation 6A10G B0G	Through Hole	1.1 V	100 V	10 µA	60 pF	6 A	Standard	R-6 Axial	150 °C	-55 °C	Standard Recovery >500ns	200 mA	R-6
Taiwan Semiconductor Corporation 6A10GHB0G	Through Hole	1.1 V	100 V	10 µA	60 pF	6 A	Standard	R-6 Axial	150 °C	-55 °C	Standard Recovery >500ns	200 mA	R-6	AEC-Q101	Automotive
Taiwan Semiconductor Corporation 6A10G A0G	Through Hole	1.1 V	100 V	10 µA	60 pF	6 A	Standard	R-6 Axial	150 °C	-55 °C	Standard Recovery >500ns	200 mA	R-6

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 100 V 6A Through Hole R-6

Technical documentation and resources