AO4620

Active

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 8SOIC

Search across all available documentation for this part.

Active

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	AO4620

Configuration	N and P-Channel
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds	448 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	24 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.6 V

Part	Power - Max [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Configuration	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	FET Feature	Current - Continuous Drain (Id) @ 25°C
Alpha & Omega Semiconductor Inc. AO4620	2 W	8-SOIC	3.9 mm	0.154 in	N and P-Channel	11 nC	30 V	8-SOIC	24 mOhm	-55 °C	150 °C	MOSFET (Metal Oxide)	Surface Mount	448 pF	2.6 V
Alpha & Omega Semiconductor Inc. AO4627	2 W	8-SOIC	3.9 mm	0.154 in	N and P-Channel		30 V	8-SOIC	50 mOhm	-55 °C	150 °C	MOSFET (Metal Oxide)	Surface Mount	210 pF	2.5 V	5 nC	Logic Level Gate	3.5 A 4.5 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly