MOSFET N/P-CH 30V 8SOIC
| Part | Power - Max [Max] | Package / Case | Package / Case [y] | Package / Case [x] | Configuration | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Supplier Device Package | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | 2 W | 8-SOIC | 3.9 mm | 0.154 in | N and P-Channel | 11 nC | 30 V | 8-SOIC | 24 mOhm | -55 °C | 150 °C | MOSFET (Metal Oxide) | Surface Mount | 448 pF | 2.6 V | |||
Alpha & Omega Semiconductor Inc. | 2 W | 8-SOIC | 3.9 mm | 0.154 in | N and P-Channel | 30 V | 8-SOIC | 50 mOhm | -55 °C | 150 °C | MOSFET (Metal Oxide) | Surface Mount | 210 pF | 2.5 V | 5 nC | Logic Level Gate | 3.5 A 4.5 A |