2SA949-Y(JVC1,F,M)

Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 150V 0.05A TO92MOD

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Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 150V 0.05A TO92MOD

Technical Specifications

Parameters and characteristics for this part

Specification	2SA949-Y(JVC1,F,M)

Current - Collector (Ic) (Max) [Max]	50 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Frequency - Transition	120 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-92-3 Long Body, TO-226-3
Power - Max [Max]	800 mW
Supplier Device Package	TO-92MOD
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	800 mV
Voltage - Collector Emitter Breakdown (Max)	150 V

Part	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Operating Temperature	Supplier Device Package	Mounting Type	Package / Case	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Toshiba Semiconductor and Storage 2SA949-O(TE6,F,M)	800 mV	PNP	150 °C	TO-92MOD	Through Hole	TO-226-3 TO-92-3 Long Body	50 mA	100 nA	150 V	120 MHz	800 mW	70
Toshiba Semiconductor and Storage 2SA949-Y(JVC1,F,M)	800 mV	PNP	150 °C	TO-92MOD	Through Hole	TO-226-3 TO-92-3 Long Body	50 mA	100 nA	150 V	120 MHz	800 mW	70
Toshiba Semiconductor and Storage 2SA949-Y(T6SHRP,FM	800 mV	PNP	150 °C	TO-92MOD	Through Hole	TO-226-3 TO-92-3 Long Body	50 mA	100 nA	150 V	120 MHz	800 mW	70
Toshiba Semiconductor and Storage 2SA949-Y,F(J	800 mV	PNP	150 °C	TO-92MOD	Through Hole	TO-226-3 TO-92-3 Long Body	50 mA	100 nA	150 V	120 MHz	800 mW	70
Toshiba Semiconductor and Storage 2SA949-Y(TE6,F,M)	800 mV	PNP	150 °C	TO-92MOD	Through Hole	TO-226-3 TO-92-3 Long Body	50 mA	100 nA	150 V	120 MHz	800 mW	70
Toshiba Semiconductor and Storage 2SA949-Y(T6ONK1,FM	800 mV	PNP	150 °C	TO-92MOD	Through Hole	TO-226-3 TO-92-3 Long Body	50 mA	100 nA	150 V	120 MHz	800 mW	70
Toshiba Semiconductor and Storage 2SA949-Y(T6JVC1,FM	800 mV	PNP	150 °C	TO-92MOD	Through Hole	TO-226-3 TO-92-3 Long Body	50 mA	100 nA	150 V	120 MHz	800 mW	70

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 150 V 50 mA 120MHz 800 mW Through Hole TO-92MOD

Technical documentation and resources