TRANS PNP 150V 0.05A TO92MOD
| Part | Vce Saturation (Max) @ Ib, Ic | Transistor Type | Operating Temperature | Supplier Device Package | Mounting Type | Package / Case | Current - Collector (Ic) (Max) [Max] | Current - Collector Cutoff (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) | Frequency - Transition | Power - Max [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 800 mV | PNP | 150 °C | TO-92MOD | Through Hole | TO-226-3 TO-92-3 Long Body | 50 mA | 100 nA | 150 V | 120 MHz | 800 mW | 70 |
Toshiba Semiconductor and Storage | 800 mV | PNP | 150 °C | TO-92MOD | Through Hole | TO-226-3 TO-92-3 Long Body | 50 mA | 100 nA | 150 V | 120 MHz | 800 mW | 70 |
Toshiba Semiconductor and Storage | 800 mV | PNP | 150 °C | TO-92MOD | Through Hole | TO-226-3 TO-92-3 Long Body | 50 mA | 100 nA | 150 V | 120 MHz | 800 mW | 70 |
Toshiba Semiconductor and Storage | 800 mV | PNP | 150 °C | TO-92MOD | Through Hole | TO-226-3 TO-92-3 Long Body | 50 mA | 100 nA | 150 V | 120 MHz | 800 mW | 70 |
Toshiba Semiconductor and Storage | 800 mV | PNP | 150 °C | TO-92MOD | Through Hole | TO-226-3 TO-92-3 Long Body | 50 mA | 100 nA | 150 V | 120 MHz | 800 mW | 70 |
Toshiba Semiconductor and Storage | 800 mV | PNP | 150 °C | TO-92MOD | Through Hole | TO-226-3 TO-92-3 Long Body | 50 mA | 100 nA | 150 V | 120 MHz | 800 mW | 70 |
Toshiba Semiconductor and Storage | 800 mV | PNP | 150 °C | TO-92MOD | Through Hole | TO-226-3 TO-92-3 Long Body | 50 mA | 100 nA | 150 V | 120 MHz | 800 mW | 70 |