
SGP10N60RUFDTU
ObsoleteON Semiconductor
IGBT, 600V, 10A, SHORT CIRCUIT RATED
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SGP10N60RUFDTU
ObsoleteON Semiconductor
IGBT, 600V, 10A, SHORT CIRCUIT RATED
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | SGP10N60RUFDTU |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 16 A |
| Current - Collector Pulsed (Icm) | 30 A |
| Gate Charge | 30 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 75 W |
| Reverse Recovery Time (trr) | 60 ns |
| Supplier Device Package | TO-220-3 |
| Switching Energy | 215 µJ, 141 µJ |
| Td (on/off) @ 25°C | 15 ns, 36 ns |
| Test Condition | 20 Ohm, 10 A, 300 V, 15 V |
| Vce(on) (Max) @ Vge, Ic | 2.8 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
SGP10N60RUFD Series
ON Semiconductor’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, UPS and general inverters where short circuit ruggedness is a required feature.
Documents
Technical documentation and resources