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SGP10N60RUFDTU - TO-220-3

SGP10N60RUFDTU

Obsolete
ON Semiconductor

IGBT, 600V, 10A, SHORT CIRCUIT RATED

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SGP10N60RUFDTU - TO-220-3

SGP10N60RUFDTU

Obsolete
ON Semiconductor

IGBT, 600V, 10A, SHORT CIRCUIT RATED

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSGP10N60RUFDTU
Current - Collector (Ic) (Max) [Max]16 A
Current - Collector Pulsed (Icm)30 A
Gate Charge30 nC
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power - Max [Max]75 W
Reverse Recovery Time (trr)60 ns
Supplier Device PackageTO-220-3
Switching Energy215 µJ, 141 µJ
Td (on/off) @ 25°C15 ns, 36 ns
Test Condition20 Ohm, 10 A, 300 V, 15 V
Vce(on) (Max) @ Vge, Ic2.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

SGP10N60RUFD Series

ON Semiconductor’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, UPS and general inverters where short circuit ruggedness is a required feature.

Documents

Technical documentation and resources