SGP10N60RUFD Series

IGBT, 600V, 10A, Short Circuit Rated

Catalog

IGBT, 600V, 10A, Short Circuit Rated

Part	Mounting Type	Reverse Recovery Time (trr)	Vce(on) (Max) @ Vge, Ic	Gate Charge	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Td (on/off) @ 25°C	Switching Energy	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Test Condition	Current - Collector Pulsed (Icm)	Current - Collector (Ic) (Max) [Max]	Supplier Device Package
ON Semiconductor SGP10N60RUFDTU	Through Hole	60 ns	2.8 V	30 nC	-55 °C	150 °C	75 W	15 ns 36 ns	141 µJ 215 µJ	600 V	TO-220-3	10 A 15 V 20 Ohm 300 V	30 A	16 A	TO-220-3

Catalog

IGBT, 600V, 10A, Short Circuit Rated

Key Features

• 10A, 600V, TC= 100°C

• Low saturation voltage: VCE(sat) = 2.1V @ IC= 10A

• Typical Fall Time. . . . . . . . . .242ns at TJ= 125°C

• High Speed Switching

• High input impedance

• Short Circuit Rating

Description

ON Semiconductor’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, UPS and general inverters where short circuit ruggedness is a required feature.