TIP147G

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ON Semiconductor

10 A, 100 V PNP DARLINGTON BIPOLAR POWER TRANSISTOR

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ON Semiconductor

10 A, 100 V PNP DARLINGTON BIPOLAR POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	TIP147G

Current - Collector Cutoff (Max)	2 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	1000
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-247-3
Supplier Device Package	TO-247-3
Transistor Type	PNP - Darlington
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

10 A, 100 V PNP Darlington Bipolar Junction Transistor

Part	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Supplier Device Package	Current - Collector Cutoff (Max)	Operating Temperature	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Max]	Operating Temperature [Min]
ON Semiconductor TIP147TTU	80 W	100 V	TO-220-3	TO-220-3	2 mA	150 °C	PNP - Darlington	3 V	Through Hole	1000
ON Semiconductor TIP147T	80 W	100 V	TO-220-3	TO-220-3	2 mA	150 °C	PNP - Darlington	3 V	Through Hole	1000
ON Semiconductor TIP147		100 V	TO-247-3	TO-247-3	2 mA		PNP - Darlington	3 V	Through Hole	1000	150 °C	-65 °C
ON Semiconductor TIP147G		100 V	TO-247-3	TO-247-3	2 mA		PNP - Darlington	3 V	Through Hole	1000	150 °C	-65 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly