TIP147T Series

10 A, 100 V PNP Darlington Bipolar Junction Transistor

Catalog

10 A, 100 V PNP Darlington Bipolar Junction Transistor

Part	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Supplier Device Package	Current - Collector Cutoff (Max)	Operating Temperature	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Max]	Operating Temperature [Min]
ON Semiconductor TIP147TTU	80 W	100 V	TO-220-3	TO-220-3	2 mA	150 °C	PNP - Darlington	3 V	Through Hole	1000
ON Semiconductor TIP147T	80 W	100 V	TO-220-3	TO-220-3	2 mA	150 °C	PNP - Darlington	3 V	Through Hole	1000
ON Semiconductor TIP147		100 V	TO-247-3	TO-247-3	2 mA		PNP - Darlington	3 V	Through Hole	1000	150 °C	-65 °C
ON Semiconductor TIP147G		100 V	TO-247-3	TO-247-3	2 mA		PNP - Darlington	3 V	Through Hole	1000	150 °C	-65 °C

10 A, 100 V PNP Darlington Bipolar Junction Transistor

• Monolithic Construction with Built In Base-Emitter Shunt Resistors

• High DC Current Gain: hFE=1000 @ VCE= -4 V, IC= -5 A (Min.)

• Industrial Use

• Complement to TIP140T/141T/142T

10 A, 100 V PNP Darlington Bipolar Junction Transistor packaged in TO-220