TPCC8105,L1Q(CM

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Toshiba Semiconductor and Storage

MOSFET P-CH 30V 23A 8TSON

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Toshiba Semiconductor and Storage

MOSFET P-CH 30V 23A 8TSON

Technical Specifications

Parameters and characteristics for this part

Specification	TPCC8105,L1Q(CM

Current - Continuous Drain (Id) @ 25°C	23 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	76 nC
Input Capacitance (Ciss) (Max) @ Vds	3240 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-VDFN Exposed Pad
Power Dissipation (Max)	30 W, 700 mW
Rds On (Max) @ Id, Vgs	7.8 mOhm
Supplier Device Package	8-TSON Advance (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	20 V
Vgs (Max) [Min]	-25 V
Vgs(th) (Max) @ Id	2 V

Part	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max) [Max]	Vgs (Max) [Min]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Technology	Mounting Type
Toshiba Semiconductor and Storage TPCC8105,L1Q(CM	76 nC	23 A	150 °C	30 W 700 mW	P-Channel	30 V	4.5 V 10 V	8-TSON Advance (3.3x3.3)	8-VDFN Exposed Pad	3240 pF	20 V	-25 V	2 V	7.8 mOhm	MOSFET (Metal Oxide)	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 30 V 23A (Ta) 700mW (Ta), 30W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)

Technical documentation and resources

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