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MOSFET P-CH 30V 23A 8TSON
| Part | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Operating Temperature | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) [Max] | Vgs (Max) [Min] | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Technology | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 76 nC | 23 A | 150 °C | 30 W 700 mW | P-Channel | 30 V | 4.5 V 10 V | 8-TSON Advance (3.3x3.3) | 8-VDFN Exposed Pad | 3240 pF | 20 V | -25 V | 2 V | 7.8 mOhm | MOSFET (Metal Oxide) | Surface Mount |