ZXMHC3A01N8TC

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Diodes Inc

30V SO8 COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE

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Diodes Inc

30V SO8 COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE

Technical Specifications

Parameters and characteristics for this part

Specification	ZXMHC3A01N8TC

Configuration	2 N and 2 P-Channel (Full Bridge)
Current - Continuous Drain (Id) @ 25°C	1.64 A, 2.17 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	3.9 nC
Input Capacitance (Ciss) (Max) @ Vds	204 pF, 190 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	870 mW
Rds On (Max) @ Id, Vgs	125 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

30V SO8 Complementary enhancement mode MOSFET H-Bridge

Part	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Configuration	Technology	Power - Max [Max]	FET Feature	Package / Case	Package / Case [y]	Package / Case [x]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C
Diodes Inc ZXMHC3A01N8TC	125 mOhm	3 V	Surface Mount	-55 °C	150 °C	8-SO	2 N and 2 P-Channel (Full Bridge)	MOSFET (Metal Oxide)	870 mW	Logic Level Gate	8-SOIC	3.9 mm	0.154 in	30 V	190 pF 204 pF	3.9 nC	1.64 A 2.17 A

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General part information

TN1.pdf

Technical documentation and resources