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30V SO8 Complementary enhancement mode MOSFET H-Bridge
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30V SO8 Complementary enhancement mode MOSFET H-Bridge
30V SO8 Complementary enhancement mode MOSFET H-Bridge
| Part | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Configuration | Technology | Power - Max [Max] | FET Feature | Package / Case | Package / Case [y] | Package / Case [x] | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 125 mOhm | 3 V | Surface Mount | -55 °C | 150 °C | 8-SO | 2 N and 2 P-Channel (Full Bridge) | MOSFET (Metal Oxide) | 870 mW | Logic Level Gate | 8-SOIC | 3.9 mm | 0.154 in | 30 V | 190 pF 204 pF | 3.9 nC | 1.64 A 2.17 A |