SCS212AGC

Obsolete

Rohm Semiconductor

DIODE SIL CARB 650V 12A TO220AC

Search across all available documentation for this part.

Obsolete

Rohm Semiconductor

DIODE SIL CARB 650V 12A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	SCS212AGC

Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	240 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220AC
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.55 V

Part	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Current - Average Rectified (Io)	Package / Case	Operating Temperature - Junction [Max]	Current - Reverse Leakage @ Vr	Speed	Reverse Recovery Time (trr)	Technology	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]
Rohm Semiconductor SCS212AGC	1.55 V	TO-220AC	12 A	TO-220-2	175 °C	240 µA	No Recovery Time	0 ns	SiC (Silicon Carbide) Schottky	Through Hole	650 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$