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DIODE SIL CARB 650V 12A TO220AC
| Part | Voltage - Forward (Vf) (Max) @ If | Supplier Device Package | Current - Average Rectified (Io) | Package / Case | Operating Temperature - Junction [Max] | Current - Reverse Leakage @ Vr | Speed | Reverse Recovery Time (trr) | Technology | Mounting Type | Voltage - DC Reverse (Vr) (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 1.55 V | TO-220AC | 12 A | TO-220-2 | 175 °C | 240 µA | No Recovery Time | 0 ns | SiC (Silicon Carbide) Schottky | Through Hole | 650 V |