2N5089RLRA

Obsolete

ON Semiconductor

TRANS NPN 25V 0.05A TO92

Search across all available documentation for this part.

Obsolete

ON Semiconductor

TRANS NPN 25V 0.05A TO92

Technical Specifications

Parameters and characteristics for this part

Specification	2N5089RLRA

Current - Collector (Ic) (Max) [Max]	50 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	400 hFE
Frequency - Transition	50 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-92-3 Long Body, Formed Leads, TO-226-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92
Supplier Device Package	TO-226
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	25 V

Part	Supplier Device Package	Package / Case	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Frequency - Transition	Supplier Device Package
ON Semiconductor 2N5089TFR	TO-92-3	TO-226-3 TO-92-3	625 mW	25 V	400 hFE	100 mA	50 nA	NPN	-55 °C	150 °C	Through Hole	50 MHz
ON Semiconductor 2N5089RLRA	TO-92	Formed Leads TO-226-3 TO-92-3 Long Body	625 mW	25 V	400 hFE	50 mA	50 nA	NPN	-55 °C	150 °C	Through Hole	50 MHz	TO-226
ON Semiconductor 2N5089BU	TO-92-3	TO-226-3 TO-92-3	625 mW	25 V	400 hFE	100 mA	50 nA	NPN	-55 °C	150 °C	Through Hole	50 MHz
ON Semiconductor 2N5089TF	TO-92-3	TO-226-3 TO-92-3	625 mW	25 V	400 hFE	100 mA	50 nA	NPN	-55 °C	150 °C	Through Hole	50 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 25 V 50 mA 50MHz 625 mW Through Hole TO-92 (TO-226)

Technical documentation and resources