2N5089TF

Obsolete

ON Semiconductor

TRANS NPN 25V 0.1A TO-92-3

Search across all available documentation for this part.

Obsolete

ON Semiconductor

TRANS NPN 25V 0.1A TO-92-3

Technical Specifications

Parameters and characteristics for this part

Specification	2N5089TF

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	400 hFE
Frequency - Transition	50 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	25 V

Part	Supplier Device Package	Package / Case	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Frequency - Transition	Supplier Device Package
ON Semiconductor 2N5089TFR	TO-92-3	TO-226-3 TO-92-3	625 mW	25 V	400 hFE	100 mA	50 nA	NPN	-55 °C	150 °C	Through Hole	50 MHz
ON Semiconductor 2N5089RLRA	TO-92	Formed Leads TO-226-3 TO-92-3 Long Body	625 mW	25 V	400 hFE	50 mA	50 nA	NPN	-55 °C	150 °C	Through Hole	50 MHz	TO-226
ON Semiconductor 2N5089BU	TO-92-3	TO-226-3 TO-92-3	625 mW	25 V	400 hFE	100 mA	50 nA	NPN	-55 °C	150 °C	Through Hole	50 MHz
ON Semiconductor 2N5089TF	TO-92-3	TO-226-3 TO-92-3	625 mW	25 V	400 hFE	100 mA	50 nA	NPN	-55 °C	150 °C	Through Hole	50 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 25 V 100 mA 50MHz 625 mW Through Hole TO-92-3

Technical documentation and resources