AO4701

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 5A 8SOIC

Search across all available documentation for this part.

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 5A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	AO4701

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	9.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	952 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	49 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.3 V

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	Package / Case [y]	Package / Case [x]	FET Feature	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Technology	Power Dissipation (Max) [Max]	Vgs (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Power Dissipation (Max)
Alpha & Omega Semiconductor Inc. AO4772	6.3 nC	2.4 V	8-SOIC	8-SOIC	3.9 mm	0.154 in	Schottky Diode (Isolated)	30 V	30 mOhm	MOSFET (Metal Oxide)	2 W	20 V	N-Channel	6 A	Surface Mount	-55 °C	150 °C	4.5 V 10 V
Alpha & Omega Semiconductor Inc. AO4701		1.3 V	8-SOIC	8-SOIC	3.9 mm	0.154 in	Schottky Diode (Isolated)	30 V	49 mOhm	MOSFET (Metal Oxide)	2 W	12 V	P-Channel	5 A	Surface Mount	-55 °C	150 °C		9.5 nC	952 pF	10 V	2.5 V
Alpha & Omega Semiconductor Inc. AO4720	30 nC	2 V	8-SOIC	8-SOIC	3.9 mm	0.154 in	Schottky Diode (Body)	30 V	11 mOhm	MOSFET (Metal Oxide)		20 V	N-Channel	13 A	Surface Mount	-55 °C	150 °C	4.5 V 10 V		1600 pF			3.1 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$