MOSFET N-CH 30V 6A 8SOIC
| Part | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Supplier Device Package | Package / Case | Package / Case [y] | Package / Case [x] | FET Feature | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Technology | Power Dissipation (Max) [Max] | Vgs (Max) | FET Type | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | 6.3 nC | 2.4 V | 8-SOIC | 8-SOIC | 3.9 mm | 0.154 in | Schottky Diode (Isolated) | 30 V | 30 mOhm | MOSFET (Metal Oxide) | 2 W | 20 V | N-Channel | 6 A | Surface Mount | -55 °C | 150 °C | 4.5 V 10 V | |||||
Alpha & Omega Semiconductor Inc. | 1.3 V | 8-SOIC | 8-SOIC | 3.9 mm | 0.154 in | Schottky Diode (Isolated) | 30 V | 49 mOhm | MOSFET (Metal Oxide) | 2 W | 12 V | P-Channel | 5 A | Surface Mount | -55 °C | 150 °C | 9.5 nC | 952 pF | 10 V | 2.5 V | |||
Alpha & Omega Semiconductor Inc. | 30 nC | 2 V | 8-SOIC | 8-SOIC | 3.9 mm | 0.154 in | Schottky Diode (Body) | 30 V | 11 mOhm | MOSFET (Metal Oxide) | 20 V | N-Channel | 13 A | Surface Mount | -55 °C | 150 °C | 4.5 V 10 V | 1600 pF | 3.1 W |