RSJ300N10TL

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Rohm Semiconductor

MOSFET N-CH 100V 30A LPTS

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Rohm Semiconductor

MOSFET N-CH 100V 30A LPTS

Technical Specifications

Parameters and characteristics for this part

Specification	RSJ300N10TL

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Input Capacitance (Ciss) (Max) @ Vds	2200 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	50 W
Rds On (Max) @ Id, Vgs [Max]	52 mOhm
Supplier Device Package	LPTS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Drain to Source Voltage (Vdss)	Operating Temperature	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id [Max]	Package / Case	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Technology	Power Dissipation (Max) [Max]	Vgs (Max)
Rohm Semiconductor RSJ300N10TL	100 V	150 °C	52 mOhm	2200 pF	LPTS	N-Channel	50 nC	30 A	2.5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	4 V	10 V	MOSFET (Metal Oxide)	50 W	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 30A (Ta) 50W (Tc) Surface Mount LPTS

Technical documentation and resources

No documents available