MOSFET N-CH 100V 30A LPTS
| Part | Drain to Source Voltage (Vdss) | Operating Temperature | Rds On (Max) @ Id, Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id [Max] | Package / Case | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Technology | Power Dissipation (Max) [Max] | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 100 V | 150 °C | 52 mOhm | 2200 pF | LPTS | N-Channel | 50 nC | 30 A | 2.5 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | Surface Mount | 4 V | 10 V | MOSFET (Metal Oxide) | 50 W | 20 V |