TK80S06K3L(T6L1,NQ

Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 80A DPAK

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Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 80A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	TK80S06K3L(T6L1,NQ

Current - Continuous Drain (Id) @ 25°C	80 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	85 nC
Input Capacitance (Ciss) (Max) @ Vds	4200 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	100 W
Rds On (Max) @ Id, Vgs	5.5 mOhm
Supplier Device Package	DPAK+
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Operating Temperature	Technology	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]
Toshiba Semiconductor and Storage TK80S06K3L(T6L1,NQ	175 °C	MOSFET (Metal Oxide)	4200 pF	80 A	3 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	85 nC	20 V	DPAK+	6 V 10 V	N-Channel	5.5 mOhm	Surface Mount	60 V	100 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 80A (Ta) 100W (Tc) Surface Mount DPAK+

Technical documentation and resources

No documents available