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MOSFET N-CH 60V 80A DPAK
| Part | Operating Temperature | Technology | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Rds On (Max) @ Id, Vgs | Mounting Type | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 175 °C | MOSFET (Metal Oxide) | 4200 pF | 80 A | 3 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 85 nC | 20 V | DPAK+ | 6 V 10 V | N-Channel | 5.5 mOhm | Surface Mount | 60 V | 100 W |