GC05MPS12-252

Obsolete

GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 27A TO252-2

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Obsolete

GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 27A TO252-2

Technical Specifications

Parameters and characteristics for this part

Specification	GC05MPS12-252

Capacitance @ Vr, F	359 pF
Current - Average Rectified (Io)	27 A
Current - Reverse Leakage @ Vr	4 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-252-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Technology	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Supplier Device Package	Mounting Type	Speed
GeneSiC Semiconductor GC05MPS12-252	0 ns	175 ░C	-55 C	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.2 kV	4 µA	SiC (Silicon Carbide) Schottky	359 pF	1.8 V	27 A	TO-252-2	Surface Mount	No Recovery Time

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1200 V 27A Surface Mount TO-252-2

Technical documentation and resources