DIODE SIL CARB 1.2KV 27A TO252-2
| Part | Reverse Recovery Time (trr) | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Package / Case | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr | Technology | Capacitance @ Vr, F | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Supplier Device Package | Mounting Type | Speed |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 0 ns | 175 ░C | -55 C | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 1.2 kV | 4 µA | SiC (Silicon Carbide) Schottky | 359 pF | 1.8 V | 27 A | TO-252-2 | Surface Mount | No Recovery Time |