2SJ380(F)

Obsolete

Toshiba Semiconductor and Storage

MOSFET P-CH 100V 12A TO220NIS

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Obsolete

Toshiba Semiconductor and Storage

MOSFET P-CH 100V 12A TO220NIS

Technical Specifications

Parameters and characteristics for this part

Specification	2SJ380(F)

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	48 nC
Input Capacitance (Ciss) (Max) @ Vds	1100 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	35 W
Rds On (Max) @ Id, Vgs	210 mOhm
Supplier Device Package	TO-220NIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Mounting Type	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
Toshiba Semiconductor and Storage 2SJ380(F)	35 W	100 V	1100 pF	20 V	2 V	TO-220-3 Full Pack	210 mOhm	TO-220NIS	Through Hole	150 °C	12 A	P-Channel	MOSFET (Metal Oxide)	48 nC	4 V	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 100 V 12A (Ta) 35W (Tc) Through Hole TO-220NIS

Technical documentation and resources