2SJ380 Series

Catalog

MOSFET P-CH 100V 12A TO220NIS

Part	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Mounting Type	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
Toshiba Semiconductor and Storage 2SJ380(F)	35 W	100 V	1100 pF	20 V	2 V	TO-220-3 Full Pack	210 mOhm	TO-220NIS	Through Hole	150 °C	12 A	P-Channel	MOSFET (Metal Oxide)	48 nC	4 V	10 V