1N8026-GA

Obsolete

GeneSiC Semiconductor

DIODE SIL CARBIDE 1.2KV 8A TO257

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Obsolete

GeneSiC Semiconductor

DIODE SIL CARBIDE 1.2KV 8A TO257

Technical Specifications

Parameters and characteristics for this part

Specification	1N8026-GA

Capacitance @ Vr, F	237 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	250 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-257-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-257
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.6 V

Part	Package / Case	Current - Average Rectified (Io)	Capacitance @ Vr, F	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Technology	Supplier Device Package	Speed
GeneSiC Semiconductor 1N8026-GA	TO-257-3	8 A	237 pF	Through Hole	1.2 kV	-55 °C	250 °C	1.6 V	10 µA	0 ns	SiC (Silicon Carbide) Schottky	TO-257	No Recovery Time

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1200 V 8A Through Hole TO-257

Technical documentation and resources